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Power Transistor
TIPP112 Darlington Transistor Wafer
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Features: a) BVcbo: ≥60V ~ 200V b) BVceo: ≥60V ~ 200V c) PCM: 30W ~ 65W d) ICM: 1.5A ~ 7A e) hFE: 30 ~ 200 f) Material: silicon
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Specifications: a) Size: 0.35mm x 0.35mm b) P: 200mW c) Io: 200mA d) VR: ≥30V e) VF: ≤1V f) IR: 2uA